Volume 44, Number 5, September-October 2010Special Issue on Probabilistic methods and their applications
|Page(s)||1049 - 1068|
|Published online||26 August 2010|
- A.M. Anile and O. Muscato, Improved hydrodynamical model for carrier transport in semiconductors. Phys. Rev. B 51 (1995) 16728–16740. [CrossRef] [Google Scholar]
- V. Borsari and C. Jacoboni, Monte Carlo calculations on electron transport in CdTe. Phys. Stat. Sol. (B) 54 (1972) 649–662. [Google Scholar]
- W. Fawcett, A.D. Boardman and S. Swain, Monte Carlo determination of electron transport properties in gallium arsenide. J. Phys. Chem. Solids 31 (1970) 1963–1990. [CrossRef] [Google Scholar]
- M.V. Fischetti and S.E. Laux, Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects. Phys. Rev. B 38 (1988) 9721–9745. [CrossRef] [Google Scholar]
- C. Jacoboni and P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation. Springer, New York (1989). [Google Scholar]
- C. Jacoboni and L. Reggiani, The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials. Rev. Modern Phys. 55 (1983) 645–705. [Google Scholar]
- C. Jungemann and B. Meinerzhagen, Hierarchical Device Simulation. The Monte-Carlo Perspective. Springer, Wien (2003). [Google Scholar]
- S.E. Laux, M.V. Fischetti, Numerical aspects and implementation of the DAMOCLES Monte Carlo device simulation program, in Monte Carlo Device Simulation: Full Band and Beyond, K. Hess Ed., Kluwer, Boston (1991) 1–26. [Google Scholar]
- J.M. Miranda, C. Lin, M. Shaalan, H.L. Hartnagel and J.L. Sebastian, Influence of the minimization of self-scattering events on the Monte Carlo simulation of carrier transport in III-V semiconductors. Semicond. Sci. Technol. 14 (1999) 804–808. [CrossRef] [Google Scholar]
- O. Muscato and W. Wagner, Time step truncation in direct simulation Monte Carlo for semiconductors. Compel 24 (2005) 1351–1366. [MathSciNet] [Google Scholar]
- U. Ravaioli, Vectorization of Monte Carlo algorithms for semiconductor simulation, in Monte Carlo Device Simulation: Full Band and Beyond, K. Hess Ed., Kluwer, Boston (1991) 267–284. [Google Scholar]
- H.D. Rees, Calculation of steady state distribution functions by exploiting stability. Phys. Lett. A 26 (1968) 416–417. [CrossRef] [Google Scholar]
- H.D. Rees, Calculation of distribution functions by exploiting the stability of the steady state. J. Phys. Chem. Solids 30 (1969) 643–655. [CrossRef] [Google Scholar]
- S. Rjasanow and W. Wagner, Stochastic Numerics for the Boltzmann Equation. Springer, Berlin (2005). [Google Scholar]
- E. Sangiorgi, B. Ricco and F. Venturi, MOS2: an efficient Monte Carlo simulator for MOS devices. IEEE Trans. Computer-Aided Des. 7 (1988) 259–271. [CrossRef] [Google Scholar]
- V. Sverdlov, E. Ungersboeck, H. Kosina and S. Selberherr, Current transport models for nanoscale semiconductor devices. Mater. Sci. Eng. R 58 (2008) 228–270. [CrossRef] [Google Scholar]
- R.M. Yorston, Free-flight time generation in the Monte Carlo simulation of carrier transport in semiconductors. J. Comput. Phys. 64 (1986) 177–194. [CrossRef] [Google Scholar]
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